Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy
Prüßing J, Böckendorf T, Hamdana G, Peiner E, Bracht H
Research article (journal) | Peer reviewedDetails about the publication
Journal: Journal of Applied Physics
Volume: 127
Status: Published
Release year: 2020
Language in which the publication is written: English
DOI: 10.1063/1.5134558
Authors from the University of Münster
| Böckendorf, Tim | Professorship of Materials Physics (Prof. Wilde) |
| Bracht, Hartmut | Institute of Materials Physics |
| Prüßing, Jan Kristen | Professorship of Materials Physics (Prof. Wilde) |