Controllable Growth and Field-Effect Property of Monolayer to Multilayer Microstripes of an Organic Semiconductor

Li L, Gao P, Schürmann KC, Ostendorp S, Wang W, Du C, Lei Y, Fuchs H, De Cola L, Müllen K, Chi LF

Forschungsartikel (Zeitschrift) | Peer reviewed

Zusammenfassung

The controllable growth of partially aligned monolayer to multilayer micrometer stripes was demonstrated by adjusting the pulling speed in a dip-coating process. The number of molecular layers decreases with the increasing pulling speed. A lower pulling speed yields mixed multilayers (3-9 monolayers). It is noteworthy that pure monolayer and bilayer microstripes over large areas can be obtained at high pulling speeds. The stripe morphology strongly depends on the pulling speed or the number of molecular layers. XRD and confocal fluorescence measurements manifest that monolayer stripes are amorphous, while multilayer stripes (>= 2) consist of crystalline states. FET devices were fabricated on these stripes. Monolayer stripes failed to reveal a field effect due to their amorphous state. In contrast, multilayer stripes exhibit good field-effect behavior. This study provides useful information for future molecular design in controlling molecular architectures. The controllable growth from monolayer to multilayer offers a powerful experimental system for fundamental research into the real charge accumulation and transporting layers for OFETs.

Details zur Publikation

FachzeitschriftJournal of the American Chemical Society (J. Am. Chem. Soc.)
Jahrgang / Bandnr. / Volume132
Ausgabe / Heftnr. / Issue26
Seitenbereich8807null
StatusVeröffentlicht
Veröffentlichungsjahr2010
Sprache, in der die Publikation verfasst istEnglisch
DOI10.1021/ja1017267
StichwörterTHIN-FILM TRANSISTORS; HIGH-MOBILITY; HIGH-PERFORMANCE; DEPOSITION; ARRAYS

Autor*innen der Universität Münster

Chi, Lifeng
Arbeitsgruppe Grenzflächenphysik (Prof. Fuchs)
De Cola, Luisa
Arbeitsgruppe Nano-Photonics (Prof. de Cola)
Du, Chuan
Physikalisches Institut (PI)
Fuchs, Harald
Arbeitsgruppe Grenzflächenphysik (Prof. Fuchs)
Lei, Yong
Institut für Materialphysik
Li, Liqiang
Physikalisches Institut (PI)
Ostendorp, Stefan
Professur für Materialphysik (Prof. Wilde)
Schuermann, Klaus
Physikalisches Institut (PI)
Wang, Wenchong
Arbeitsgruppe Grenzflächenphysik (Prof. Fuchs)