Controllable Growth and Field-Effect Property of Monolayer to Multilayer Microstripes of an Organic Semiconductor

Li L, Gao P, Schürmann KC, Ostendorp S, Wang W, Du C, Lei Y, Fuchs H, De Cola L, Müllen K, Chi LF

Research article (journal) | Peer reviewed

Abstract

The controllable growth of partially aligned monolayer to multilayer micrometer stripes was demonstrated by adjusting the pulling speed in a dip-coating process. The number of molecular layers decreases with the increasing pulling speed. A lower pulling speed yields mixed multilayers (3-9 monolayers). It is noteworthy that pure monolayer and bilayer microstripes over large areas can be obtained at high pulling speeds. The stripe morphology strongly depends on the pulling speed or the number of molecular layers. XRD and confocal fluorescence measurements manifest that monolayer stripes are amorphous, while multilayer stripes (>= 2) consist of crystalline states. FET devices were fabricated on these stripes. Monolayer stripes failed to reveal a field effect due to their amorphous state. In contrast, multilayer stripes exhibit good field-effect behavior. This study provides useful information for future molecular design in controlling molecular architectures. The controllable growth from monolayer to multilayer offers a powerful experimental system for fundamental research into the real charge accumulation and transporting layers for OFETs.

Details about the publication

JournalJournal of the American Chemical Society (J. Am. Chem. Soc.)
Volume132
Issue26
Page range8807null
StatusPublished
Release year2010
Language in which the publication is writtenEnglish
DOI10.1021/ja1017267
KeywordsTHIN-FILM TRANSISTORS; HIGH-MOBILITY; HIGH-PERFORMANCE; DEPOSITION; ARRAYS

Authors from the University of Münster

Chi, Lifeng
Interface Physics Group (Prof. Fuchs)
De Cola, Luisa
Nano-Photonics Group (Prof. de Cola)
Du, Chuan
Institute of Physics (PI)
Fuchs, Harald
Interface Physics Group (Prof. Fuchs)
Lei, Yong
Institute of Materials Physics
Li, Liqiang
Institute of Physics (PI)
Ostendorp, Stefan
Professorship of Materials Physics (Prof. Wilde)
Schuermann, Klaus
Institute of Physics (PI)
Wang, Wenchong
Interface Physics Group (Prof. Fuchs)