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Function by defects at the atomic scale - New concepts for non-volatile memories

Waser R, Dittmann R, Salinga M, Wuttig M

Research article (journal) | Peer reviewed

Details about the publication

Journal: Solid-State Electronics
Volume: 54
Issue: 9
Page range: 830-840
Status: Published
Release year: 2010
Language in which the publication is written: English
DOI: 10.1016/j.sse.2010.04.043

Authors from the University of Münster

Salinga, Martin
Professorship of experimental physics and materials science