Control over Patterning of Organic Semiconductors: Step-Edge-Induced Area-Selective Growth
Wang WC, Du C, Zhong DY, Hirtz M, Wang Y, Lu N, Wu LX, Ebeling D, Li LQ, Fuchs H, Chi LF
Research article (journal) | Peer reviewedAbstract
A method concerning step-edge-induced area-selective growth for the patterning of aromatic organic molecules is proposed. Based on such a growth mechanism, crack-free, organic crystalline films and the growth of different molecules at defined locations can be achieved. The figure shows a schematic representation of the separation of molecules by nucleation-sites recognition.
Details about the publication
Journal: Advanced Materials (Adv. Mat.)
Volume: 21
Issue: 46
Page range: 4721null
Status: Published
Release year: 2009 (11/12/2009)
Language in which the publication is written: English
Keywords: organic field-effect transistors; organic semiconductors; patterning
Authors from the University of Münster
| Chi, Lifeng | Interface Physics Group (Prof. Fuchs) |
| Du, Chuan | Institute of Physics (PI) |
| Fuchs, Harald | Interface Physics Group (Prof. Fuchs) |
| Hirtz, Michael | Institute of Physics (PI) |
| Li, Liqiang | Institute of Physics (PI) |
| Wang, Wenchong | Interface Physics Group (Prof. Fuchs) |
| Zhong, Dingyong | Institute of Physics (PI) |