Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

Zhu J, Wang W, Zhong Q, Li L, Du C, Lv A, Wang H, Fuchs H, Chi LF

Forschungsartikel (Zeitschrift) | Peer reviewed

Zusammenfassung

In this communication, a direct coupling of patterned growth of rubrene crystalline thin films with OFET fabrication is presented. The film was grown between pre-patterned Au electrodes covered with an organic monolayer, which directly allowed the fabrication of OFET devices with a sub-micrometer channel length. More importantly, close packed and porous film structures can be controlled by adjusting the space between the electrodes, resulting in a two orders of magnitude difference in carrier mobility. The technique is completely compatible with lithography methods thus may find potential applications in addressable and crosstalk suppressing OFET arrays.

Details zur Publikation

FachzeitschriftJournal of Materials Chemistry C
Jahrgang / Bandnr. / Volume2
Ausgabe / Heftnr. / Issue44
Seitenbereich9359-9363
StatusVeröffentlicht
Veröffentlichungsjahr2014
Sprache, in der die Publikation verfasst istEnglisch
DOI10.1039/C4TC01590H
Stichwörterrubrene crystalline; OFET devices; carrier mobility; with lithography

Autor*innen der Universität Münster

Chi, Lifeng
Arbeitsgruppe Grenzflächenphysik (Prof. Fuchs)
Du, Chuan
Physikalisches Institut (PI)
Fuchs, Harald
Arbeitsgruppe Grenzflächenphysik (Prof. Fuchs)
Li, Liqiang
Physikalisches Institut (PI)
Wang, Wenchong
Arbeitsgruppe Grenzflächenphysik (Prof. Fuchs)