Weak Epitaxy Growth of Copper Hexadecafluorophthalocyanine (F16CuPc) on p-Sexiphenyl Monolayer Film

Wang T, Ebeling D, Yang JL, Du C, Chi LF, Fuchs H, Yan DH

Forschungsartikel (Zeitschrift) | Peer reviewed

Zusammenfassung

Weak epitaxy growth (WEG) behavior and mechanism of copper hexadecafluorophthalocyanine (F16CuPc) on p-sexiphenyl (p-6P) monolayer film were investigated by atomic force microscopy (AFM), selected area electron diffraction (SEAD), and wide-angle X-ray diffraction (WAXD). High-quality F16CuPc films with high order, large size, and molecular-level smoothness were obtained successfully by WEG method. It was identified that there exists incommensurate epitaxial relation between highly oriented F16CuPc and p-6P films. The geometrical channels of p-6P monolayer surface induce the nucleation and growth of F16CuPc molecules. Two kinds of in-plane structures, referred to as "phase I" and "phase II", coexist in the initial few molecular layers. As thin-film thickness increases, the distance of (001) plane diminishes and phase I disappears. Furthermore, coalescence, dislocation, and high-angle grain boundary between F16CuPc neighboring domains were observed by high-resolution AFM.

Details zur Publikation

FachzeitschriftJournal of Physical Chemistry B (J. Phys. Chem. B)
Jahrgang / Bandnr. / Volume113
Ausgabe / Heftnr. / Issue8
Seitenbereich2333-2337
StatusVeröffentlicht
Veröffentlichungsjahr2009 (26.02.2009)
Sprache, in der die Publikation verfasst istEnglisch
Stichwörterpotassium hydrogen phthalate field-effect transistors angle grain-boundaries thin-films mobility

Autor*innen der Universität Münster

Chi, Lifeng
Arbeitsgruppe Grenzflächenphysik (Prof. Fuchs)
Du, Chuan
Physikalisches Institut (PI)
Fuchs, Harald
Arbeitsgruppe Grenzflächenphysik (Prof. Fuchs)