Radiotracer diffusion of Ag in Cu(In,Ga)Se2 thin films

Wegner M., Wilangowski F., Wuerz R., Stolwijk N.

Research article (journal) | Peer reviewed

Abstract

Diffusion of Ag in Cu(In,Ga)Se2 was investigated utilizing radiotracer sputter-profiling of 110mAg. After removal of the CdS capping layer the 110mAg isotope was deposited on the front-surface of the Cu(In,Ga)Se2 layer and the samples were subjected to isothermal annealing in a temperature interval ranging from 573 K up to 648 K. The observed Ag diffusivity can be described by the following Arrhenius equation D(T) = 0.12 exp(-1.29 eV/kBT) cm2/s. Comparison with the diffusivities of Zn, Cd and Fe in Cu(In,Ga)Se2 in the investigated temperature regime reveals similiar activation energies, but a larger pre-exponential factor for Ag diffusion resulting in accelerated diffusion kinetics.

Details about the publication

JournalThin Solid Films
Volumenull
Issuenull
Page range1-4
Statusonline first
Release year2016 (23/09/2016)
Language in which the publication is writtenEnglish
DOI10.1016/j.tsf.2016.09.045
Link to the full texthttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84999862757&origin=inward
KeywordsCopper indium gallium diselenide (CIGSe); Diffusion; Ion-beam sputtering; Radiotracer; Thin-film solar cell

Authors from the University of Münster

Hergemöller, Fabian
Professorship of Materials Physics (Prof. Wilde)
Stolwijk, Nicolaas
Professorship of Materials Physics (Prof. Wilde)
Wegner, Matthias
Professorship of Materials Physics (Prof. Wilde)