Very large-bandgap insulating monolayers of ODS on SiC
Aghdassi N, Dulson D, Linden S, Li L, Chi LF, Zacharias H
Research article (journal) | Peer reviewedAbstract
In the present work we describe the electronic properties of octadecylsiloxane (ODS) adsorbed on 6H-SiC(0001). A quantitative analysis of the C 1s region of the functionalized samples by X-ray photoelectron spectroscopy (XPS) revealed a surface coverage of about one monolayer. The highest occupied molecular orbital (HOMO) of the organic film is located about Eb=-5.3eV below the Fermi level as determined by ultraviolet photoemission spectroscopy (UPS). Inverse photoemission (IPE) determined the energetic position of the lowest unoccupied molecular orbital (LUMO) about Eu=3.7eV above the Fermi level. Thus the HOMO-LUMO energy gap is determined to about 9eV for the present system. A comparison between the respective electronic states of the substrate and the adsorbate revealed barrier heights for charge transport from the substrate into the adsorbate, 3.3eV and 2.7eV for electrons and holes, respectively. The time evolution of the collected IPE spectra indicates that the LUMO is mainly attributed to antibonding bonds.
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Authors from the University of Münster
| Aghdassi, Nabi | Institute of Physics (PI) |
| Chi, Lifeng | Interface Physics Group (Prof. Fuchs) |
| Dulson, Dorothea | Institute of Physics (PI) |
| Linden, Steffen | Institute of Physics (PI) |
| Zacharias, Helmut | Institute of Physics (PI) |