Ion beam sputter deposition of V2O5 thin films

Gallasch T, Stockhoff T, Baither D, Schmitz G

Abstract

V2O5 thin films were deposited by means of dc-ion beam sputtering. To determine the influence of various deposition parameters, samples were characterized by X-ray diffractometry and transmission electron microscopy. Using electron energy loss spectroscopy, the oxidation state of vanadium was quantified based on the chemical shift of absorption edges. Measurement of in-plane direct current showed that the electronic conductivity varies over several orders of magnitude depending on the preparation conditions. The desired structure suitable for battery applications is achieved by sputtering under partial pressure of oxygen and suitable post-annealing under ambient atmosphere. Reversible intercalation of Li into the produced thin films was demonstrated. (C) 2010 Elsevier B.V. All rights reserved.