Functionalization of amorphous SiO₂ and 6H-SiC(0001) surfaces with benzo[ghi]perylene-1,2-dicarboxylic anhydride via an APTES linker.

Bhowmick DK, Linden S, Devaux A, De Cola L, Zacharias H

Forschungsartikel (Zeitschrift) | Peer reviewed

Zusammenfassung

The successful covalent functionalization of quartz and n-type 6H-SiC with organosilanes and benzo[ghi]perylene-1,2-dicarboxylic dye is demonstrated. In particular, wet-chemically processed self-assembled layers of aminopropyltriethoxysilane (APTES) and benzo[ghi]perylene-1,2-dicarboxylic anhydride are investigated. The structural and chemical properties of these layers are studied by contact angle measurements, attenuated total reflection infrared (ATR-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The optical properties are measured by confocal microscopy. The wetting angles observed for the organic layers are α = 68° for the APTES-functionalized surface, while angles of α = 85° and 78° are determined for dye-functionalized quartz and 6H-SiC surfaces, respectively. However, not all amino groups of the APTES-functionalized surfaces react to bind dye molecules. Further dye functionalization is not uniform throughout the surface, showing different island sizes of the dye and including different chemical environments. The quartz surface exhibits a higher packing density of dyes than the 6H-SiC surface. The fluorescence lifetimes of the surface-attached dye show double exponential decays of about 1.4 and 4.2 ns, largely independent of the substrates.

Details zur Publikation

FachzeitschriftSmall
Jahrgang / Bandnr. / Volume8
Ausgabe / Heftnr. / Issue4
Seitenbereich592-601
StatusVeröffentlicht
Veröffentlichungsjahr2012 (20.02.2012)
Sprache, in der die Publikation verfasst istEnglisch
DOI10.1002/smll.201101941
Link zum Volltexthttp://www.ncbi.nlm.nih.gov/pubmed/22262648

Autor*innen der Universität Münster

Bhowmick, Deb Kumar
Physikalisches Institut (PI)
De Cola, Luisa
Arbeitsgruppe Nano-Photonics (Prof. de Cola)
Linden, Steffen
Physikalisches Institut (PI)
Zacharias, Helmut
Physikalisches Institut (PI)