Triple Junction Transport and the impact of Grain Boundary width in nanocrystalline Cu

M.R. Chellali, Z. Balogh, R. Schlesiger, P. Stender, H. Bouchikhaoui, L. Zheng, G. Schmitz

Forschungsartikel (Zeitschrift) | Peer reviewed

Zusammenfassung

Triple junctions (TJ), singular topological defects of the grain boundary (GB) structure, get a dominant role for grain growth and atomic transport in nanocrystalline matter. Here, we present detailed measurements by atom probe tomography, even of the temperature dependence of TJ transport of Ni in nanocrystalline Cu in the chemical regime of interdiffusion. An unexpected variation of the effective width of merging GBs with temperature is detected. It is demonstrated that proper measurement of TJ transport requires taking into account this remarkable effect. TJ diffusion is found to be a factor of about 200 faster than GB diffusion. Its activation energy amounts to only two-thirds of that of the GB.

Details zur Publikation

Jahrgang / Bandnr. / Volume2012
Seitenbereich3448-3454
StatusVeröffentlicht
Veröffentlichungsjahr2012
Sprache, in der die Publikation verfasst istEnglisch
DOI10.1021/nl300751q
StichwörterNanocrystalline metals; grain boundary diffusion; triple junction transport; grain boundary width; atom probe tomography; CuNi

Autor*innen der Universität Münster

Balogh, Zoltán
Professur für Materialphysik I (Prof. Schmitz)
Schlesiger, Ralf
Institut für Materialphysik
Schmitz, Guido
Institut für Materialphysik
Stender, Patrick
Institut für Materialphysik