Diffusion of boron in germanium at 800–900 °C revisited

Kipke F, Südkamp T, Prüßing J, Bougeard D, Bracht H (2020)

In: Journal of Applied Physics, 127. doi:10.1063/1.5134537

Research article (journal) | Peer reviewed | Published

Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography

Hamdana G., Südkamp T., Descoins M., Mangelinck D., Caccamo L., Bertke M., Wasisto H., Bracht H., Peiner E. (2017)

In: Microelectronic Engineering, 179(null), 74-82. doi:10.1016/j.mee.2017.04.030

Research article (journal) | Peer reviewed | Published

Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb

Kujala J., Südkamp T., Slotte J., Makkonen I., Tuomisto F., Bracht H. (2016)

In: Journal of Physics: Condensed Matter, 28(33). doi:10.1088/0953-8984/28/33/335801

Research article (journal) | Peer reviewed | Published

Response to "Comment on 'Diffusion of n-type dopants in germanium' " [Appl. Phys. Rev. 2, 036101 (2015)]

In: .

| Peer reviewed

Publications

Operated by

Top-Links

Diffusion of boron in germanium at 800–900 °C revisited Kipke F, Südkamp T, Prüßing J, Bougeard D, Bracht H (2020) In: Journal of Applied Physics, 127. doi:10.1063/1.5134537 Research article (journal) \| Peer reviewed \| Published
Self-diffusion in single crystalline silicon nanowires Südkamp T., Hamdana G., Descoins M., Mangelinck D., Wasisto H., Peiner E., Bracht H. (2018) In: Journal of Applied Physics, 123(16). doi:10.1063/1.4996987 Research article (journal) \| Peer reviewed \| Published
Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography Hamdana G., Südkamp T., Descoins M., Mangelinck D., Caccamo L., Bertke M., Wasisto H., Bracht H., Peiner E. (2017) In: Microelectronic Engineering, 179(null), 74-82. doi:10.1016/j.mee.2017.04.030 Research article (journal) \| Peer reviewed \| Published
Large-area fabrication of silicon nanostructures by templated nanoparticle arrays Hamdana G., Bertke M., Südkamp T., Bracht H., Wasisto H., Peiner E. (2017) In: (eds.), . Research article in edited proceedings (conference) \| Peer reviewed \| Published
Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb Kujala J., Südkamp T., Slotte J., Makkonen I., Tuomisto F., Bracht H. (2016) In: Journal of Physics: Condensed Matter, 28(33). doi:10.1088/0953-8984/28/33/335801 Research article (journal) \| Peer reviewed \| Published
Self-diffusion in crystalline silicon: A single diffusion activation enthalpy down to 755 C Südkamp T., Bracht H. (2016) In: Physical Review B - Condensed matter and materials physics, 94(12). doi:10.1103/PhysRevB.94.125208 Research article (journal) \| Peer reviewed \| Published
Response to "Comment on 'Diffusion of n-type dopants in germanium' " [Appl. Phys. Rev. 2, 036101 (2015)] In: . \| Peer reviewed
Doping dependence of self-diffusion in germanium and the charge states of vacancies In: . \| Peer reviewed